產(chǎn)品線卡
Nexperia總部位于荷蘭，是一家在歐洲擁有豐富悠久發(fā)展歷史的全球性半導(dǎo)體公司，目前在歐洲、亞洲和美國共有14,000多名員工。作為基礎(chǔ)半導(dǎo)體器件開發(fā)和生產(chǎn)的領(lǐng)跑者，Nexperia的器件被廣泛應(yīng)用于汽車、工業(yè)、移動(dòng)和消費(fèi)等多個(gè)應(yīng)用領(lǐng)域，幾乎為世界上所有電子設(shè)計(jì)的基本功能提供支持。
Nexperia為全球客戶提供服務(wù)，每年的產(chǎn)品出貨量超過1,000億件。這些產(chǎn)品在效率（如工藝、尺寸、功率及性能）方面成為行業(yè)基準(zhǔn)，獲得廣泛認(rèn)可。Nexperia擁有豐富的IP產(chǎn)品組合和持續(xù)擴(kuò)充的產(chǎn)品范圍，并獲得了IATF 16949、ISO 9001、ISO 14001和ISO 45001標(biāo)準(zhǔn)認(rèn)證，充分體現(xiàn)了公司對(duì)于創(chuàng)新、高效和滿足行業(yè)嚴(yán)苛要求的堅(jiān)定承諾。
產(chǎn)品
NSF080120L4A0
1200 V, 80 mOhm, N-channel SiC MOSFET
The NSF080120L4A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
The NSF080120L4A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
1200 V, 80 mOhm, N-channel SiC MOSFET
The NSF080120L4A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
The NSF080120L4A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
NSF080120L3A0
1200 V, 80 mΩ, N-channel SiC MOSFET
The NSF080120L3A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 3-pin TO-247-3L plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
The NSF080120L3A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 3-pin TO-247-3L plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
1200 V, 80 mΩ, N-channel SiC MOSFET
The NSF080120L3A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 3-pin TO-247-3L plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
The NSF080120L3A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 3-pin TO-247-3L plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
NSF080120D7A0
1200 V, 80 m?, N-channel SiC MOSFET
The NSF080120D7A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 7-pin TO-263 plastic package for surface mounting PCB technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
The NSF080120D7A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 7-pin TO-263 plastic package for surface mounting PCB technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
1200 V, 80 m?, N-channel SiC MOSFET
The NSF080120D7A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 7-pin TO-263 plastic package for surface mounting PCB technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
The NSF080120D7A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 7-pin TO-263 plastic package for surface mounting PCB technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
NSF060120L4A0
1200 V, 60 mOhm, N-channel SiC MOSFET
The NSF060120L4A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247-4 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
The NSF060120L4A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247-4 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
1200 V, 60 mOhm, N-channel SiC MOSFET
The NSF060120L4A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247-4 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
The NSF060120L4A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247-4 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
NSF060120L3A0
1200 V, 60 mΩ, N-channel SiC MOSFET
The NSF060120L3A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 3-pin TO-247-3L plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
The NSF060120L3A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 3-pin TO-247-3L plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
1200 V, 60 mΩ, N-channel SiC MOSFET
The NSF060120L3A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 3-pin TO-247-3L plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
The NSF060120L3A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 3-pin TO-247-3L plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
NSF060120D7A0
1200 V, 60 m?, N-channel SiC MOSFET
The NSF060120D7A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 7-pin TO-263 plastic package for surface mounting PCB technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
The NSF060120D7A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 7-pin TO-263 plastic package for surface mounting PCB technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
1200 V, 60 m?, N-channel SiC MOSFET
The NSF060120D7A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 7-pin TO-263 plastic package for surface mounting PCB technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
The NSF060120D7A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 7-pin TO-263 plastic package for surface mounting PCB technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
NSF040120L4A0
1200 V, 40 mΩ, N-channel SiC MOSFET
The NSF040120L4A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
The NSF040120L4A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
1200 V, 40 mΩ, N-channel SiC MOSFET
The NSF040120L4A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
The NSF040120L4A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 4-pin TO-247 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
NSF040120L3A0
1200 V, 40 m?, N-channel SiC MOSFET
The NSF040120L3A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 3-pin TO-247-3 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
The NSF040120L3A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 3-pin TO-247-3 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
1200 V, 40 m?, N-channel SiC MOSFET
The NSF040120L3A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 3-pin TO-247-3 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
The NSF040120L3A0 is a Silicon Carbide based 1200 V power MOSFET in a well-established 3-pin TO-247-3 plastic package for through hole PCB mounting technology. The excellent RDSon temperature stability combined with its fast switching speed makes it a product of choice in high power and high voltage industrial applications like E-vehicle charging infrastructure, photovoltaic inverters and motor drives.
